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Landolt-Börnstein.
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Madelung, O.
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Landolt-Börnstein.
AND
Madelung, O.
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Semiconductors. Subvol. A2, Pt. alpha group IV. Impurities and defects in group IV elements, IV-IV and III-V ccompounds Elements : supplement to vols. III/17,22 (print version) rev...
Landolt-Börnstein.
2002
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Semiconductors. Subvol. A1, Pt. alpha2. Group IV elements, IV-IV anmd III-V compounds Lattice properties : supplement to vols. III/17,22 (print version) revised and updated edition...
Landolt-Börnstein.
2001
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Semiconductors. Subvol. C, 1. Non-tetrahedrally bonded elements and binary compounds : supplement to vols. III/17,22 (print version) revised and updated edition of vols. III/17,22...
Landolt-Börnstein.
1997
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Halbleiter. Teilbd E. Physik der nicht-tetraedrisch gebundenen Elemente und binänren Verbindungen I /
Landolt-Börnstein.
1983
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Halbleiter. Teilbd A. Physik der Elemente der IV. Gruppe und der III-V Verbindungen /
Landolt-Börnstein.
1982
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5
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5
Name
Landolt-Börnstein.
Madelung, O.
Bimberg, D.
1
Freyland, W.
1
Subject
diamond
1
elemental semiconductor
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germanium
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impurity
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lattice parameter
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physical properties
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semiconductor
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silicon
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FAAB - Solid state physics - reference books
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FJKB - Elemental semiconductors
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FJK - Specific semiconductor materials
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FJKC - III - V semiconductors
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FJKD - Compound semiconductors
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