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Semiconductors. Subvol. A1, Pt. beta. Group IV elements, IV-IV anmd III-V compounds Electronic, transport, optical and other properties : supplement to vols. III/17,22 (print version) revised and updated edition of vols. III/17,22 (CD-ROM) : supplement to vols. III/17a, 22a (print version), revised and updated edition of vols. III/17a, 22a (CD-ROM) /
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Semiconductors. Subvol. A1, Pt. alpha2. Group IV elements, IV-IV anmd III-V compounds Lattice properties : supplement to vols. III/17,22 (print version) revised and updated edition of vols. III/17,22 (CD-ROM) : supplement to vols. III/17a, 22a (print version), revised and updated edition of vols. III/17a, 22a (CD-ROM) /
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3
Semiconductors: basic data.
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4
Handbook series on semiconductor parameters. 1. Si, Ge, C Diamond, GaAs, GaP, GaSb, InAs, InP, InSb.
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Semiconductors. Group IV elements and III-V compounds /
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Bivalente Störstellen in Silizium, Germanium und Galliumarsenid.
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Roos, G.
1990
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Halbleiterätzverfahren: Kinetik, Verfahrensgrundlagen und Anwendungsgebiete von nasschemischen Ätzverfahren für Silizium, Galliumarsenid, Galliumphosphid und Indiumphosphid.
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Loewe, H.
1990
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Halbleiter. Teilband B. Störstellen und Defekte in Elementen der IV. Gruppe und III-V Verbindungen : Ergänzungen und Erweiterungen zu Band III/17 /
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Halbleiter. Teilbd A. Physik der Elemente der IV. Gruppe und der III-V Verbindungen /
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