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Semiconductors. Subvol. A2, Pt. beta group IV-IV and III-V compounds. Impurities and defects in group IV elements, IV-IV and III-V compounds : supplement to vols. III/17,22 (print version) revised and updated edition of vols. III/17,22 (CD-ROM) : supplement to vols. III/ 22b (print version), revised and updated edition of vols. III/22b (CD-ROM) /
Book
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Semiconductors. Subvol. A2, Pt. alpha group IV. Impurities and defects in group IV elements, IV-IV and III-V ccompounds Elements : supplement to vols. III/17,22 (print version) revised and updated edition of vols. III/17,22 (CD-ROM) : supplement to vols. III/ 22b (print version), revised and updated edition of vols. III/22b (CD-ROM) /
Book
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Untersuchung des Löslichkeitsverhaltens von Silizium in Gallium Arsenid mittels Transmissionselektronenmikroskopie und Sekundärionenmassenspektroskopie [E-Book] /
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A comprehensive treatise on inorganic and theoretical chemistry. 6. C (part 2), Si, silicates /
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Subject (ZB): ...solubility...