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Metallorganische chemische Gasphasenabscheidung (MOCVD) ferroelektrischer Dünnschichten : Herstellung und Charakterisierung /
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Reaction and transport processes in OMCVD : selective and group III-nitride growth /
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Abscheidung von kohlenstoffbasierten Schichten im Grobvakuum mittels Mittelfrequenz-Plasma-CVD /
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Relation between growth rate, material quality, and device grade condition for intrinsic microcrystalline silicon : from layer investigation to the application to thin-film tandem solar-cells /
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