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crystal growth
FJKC - III - V semiconductors
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FJKC - III - V semiconductors
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1
Book
International Conference on Indium Phosphide and Related Materials. 11 : IPRM 1999 : May 16-20, 1999 Congress Centrum Davos, Davos, Switzerland : postdeadline papers, /
1999
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2
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International Conference on Indium Phosphide and Related Materials. 11 : IPRM 1999 : May 16-20, 1999 Congress Centrum Davos, Davos, Switzerland : conference proceedings /
1999
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3
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Gallium nitride (GaN) II /
Pankove, Jacques I.
1999
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4
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Gallium nitride (GaN) 1 /
Pankove, Jacques I.
1998
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5
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GaN and related materials /
Pearton, Stephen J.
1997
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Semiinsulating III-V materials : Conference on semiinsulating III-V materials 0006: proceedings : Toronto, 13.05.90-16.05.90.
Milnes, A. G.
1990
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7
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Indium phosphide : crystal growth and characterization.
Willardson, R. K.
1990
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Available as
Print Edition
7
Material Type
Book
7
Type of Literature
Conference Publication
3
Year of Publication
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Location
ZB
7
Name
Pankove, Jacques I.
2
Milnes, A. G.
1
Pearton, Stephen J.
1
Willardson, R. K.
1
Subject
III - V semiconductor
7
crystal growth
epitaxy
3
optoelectronics
3
semiconductor device
3
crystal structure
2
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laser
2
nanostructures
2
physical properties
2
solid state device
2
characterization
1
crystal defect
1
defect
1
materials characterization
1
molecular beam epitaxy
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optical properties
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Classification
FJKC - III - V semiconductors
FJLB - Physics of semiconductor devices
3
FGK - Thin film technology, epitaxy
2
FGCD - Crystal growth of specific substances
1
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