1
International Conference on Indium Phosphide and Related Materials : 14-18 May 2000, Williamsburg Marriott, Williamsburg, Virginia, USA.
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2000
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International Conference on Indium Phosphide and Related Materials. 11 : IPRM 1999 : May 16-20, 1999 Congress Centrum Davos, Davos, Switzerland : postdeadline papers, /
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1999
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International Conference on Indium Phosphide and Related Materials. 11 : IPRM 1999 : May 16-20, 1999 Congress Centrum Davos, Davos, Switzerland : conference proceedings /
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1999
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Antimonide-related stained-layer heterostructures /
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Topics in growth and device processing of III-V semiconductors /
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International Conference on Indium Phosphide and Related Materials. 7 : (IPRM 1995), proceedings : Sapporo, 9. - 13.-5.1995.
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1995
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III-V electronic and photonic device fabrication and performance: symposium: papers : San-Francisco, CA, 12.04.93-15.04.93.
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Herstellung und Charakterisierung von Detektoren im Materialsystem AlGaAs/GaAs [E-Book] /
“...FJLB - Physics of semiconductor devices...”

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International Conference on Indium Phosphide and Related Materials. 4 : (IPRM 4) : Newport, RI, 21. - 24.4.1992.
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1992
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III-V microelectronics : European summer school III-V microelectronics: lectures : European Materials Research Society meeting : Strasbourg, 26.11.90-30.11.90.
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International Conference on Indium Phosphide and Related Materials. 3 : (IPRM 3) : digest, Cardiff, 8.4. - 11.4.1991.
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1991
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International Conference on Indium Phosphide and Related Materials. 3 : (IPRM 3) : proceedings, Cardiff, 8. - 11.4.1991.
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1991
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Degradation mechanisms in III-V compound semiconductor devices and structures: symposium : San-Francisco, CA, 17.04.90-18.04.90.
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International conference on indium phosphide and related materials for advanced electronic and optical devices 0001: proceedings : Norman, OK, 20.03.89-22.03.89.
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Singh, R.
1989
“...FJLB - Physics of semiconductor devices...”
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Compound semiconductors : growth, processing, and devices : conference, Gainesville, Fla., 26.-28.10.1987 /
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