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1
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Parameter Temperaturmodell für CMOS Transistoren für den Temperaturbereich von 50 Celsius bis 250 Celsius.
Dalsass, K. G.
1989
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Duisburger
Mikroelektronik
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2
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Feldeffekttransistoren aus III-V Halbleitern: Simulation mit stationären und nichtstationären Modellen.
Brockerhoff, W.
1989
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Duisburger
Mikroelektronik
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Brockerhoff, W.
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Dalsass, K. G.
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TBG - Transistors
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