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Quantitative investigation of group III-nitride interfaces by a combination of scanning tunneling microscopy and off-axis electron holography /
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Quantitative investigation of group III-nitride interfaces by a combination of scanning tunneling microscopy and off-axis electron holography [E-Book] /
“...FFPE - Thin film electronic properties, semiconductor interfaces...”

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Beurteilung der optischen Eigenschaften von AlGaInP hergestellt in der metallorganischen Gasphasenepitaxie unter Stickstoff- oder Wasserstoffatmosphäre [E-Book] /
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Kompositionelle und strukturelle Charakterisierung von verspannten Si/SiGe-Heterostrukturen mit hochauflösender Transmissionselektronenmikroskopie [E-Book] /
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TEM/TED studies of epitaxial layers of ternary and quaternary group III-V compound semiconductor alloys.
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