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Werkstoffe der Halbleitertechnik /
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Crystal growth of electronic materials. 5, 5 : Based on the lectures : International Summer School on Crystal Growth and Materials Research : ISSCG : Davos, 03.09.1983-10.09.1983.
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Kaldis, E.
1985
“...FGCD - Crystal growth of specific substances...”
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Lightwave communications technology. A. Material growth technologies.
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“...FGCD - Crystal growth of specific substances...”
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Neutron transmutation doping of semiconductor materials : Neutron transmutation doping conference 0004: proceedings : Gaithersburg, MD, 01.06.82-03.06.82 /
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Halbleiter. Teilbd C. Technologie von Si, Ge und SiC /
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Halbleiter. Teilbd D. Technologie der III-V, II-VI und nicht tetraedrisch gebundenen Verbindungen /
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Baars, Jan
1984
“...FGCD - Crystal growth of specific substances...”
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Neutron transmutation doped silicon : International conference on neutron transmutation doping of silicon 0003: proceedings : Köbenhavn, 27.08.80-29.08.80 /
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“...FGCD - Crystal growth of specific substances...”
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Materials, properties and preparation.
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“...FGCD - Crystal growth of specific substances...”
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Neutron transmutation doping in semiconductors : International conference on transmutation doping in semiconductors 0002: proceedings : Columbia, MO, 23.04.78-26.04.78 /
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Züchtung und Eigenschaften von Halbleiterwerkstoffen
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1973
“...FGCD - Crystal growth of specific substances...”
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Halbleiterwerkstoffe /
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Semiconductors: preparation, crystal growth, and selected properties /
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Semiconductor crystal manufacture.
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Metallurgy of elemental and compound semiconductors : Boston, MA, 29.08.60-31.08.60 /
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