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Spontaneous ordering in semiconductor alloys /
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Properties of advanced semiconductur materials GaN, AlN, InN, BN, SiC, SiGe /
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International Conference on Indium Phosphide and Related Materials : 14-18 May 2000, Williamsburg Marriott, Williamsburg, Virginia, USA.
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2000
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International Conference on Indium Phosphide and Related Materials. 11 : IPRM 1999 : May 16-20, 1999 Congress Centrum Davos, Davos, Switzerland : postdeadline papers, /
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1999
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International Conference on Indium Phosphide and Related Materials. 11 : IPRM 1999 : May 16-20, 1999 Congress Centrum Davos, Davos, Switzerland : conference proceedings /
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1999
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Handbook series on semiconductor parameters. 2. Ternary and quaternary III-V compounds /
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Gallium nitride (GaN) II /
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Hydrogen in semiconductors. 2 /
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Gallium nitride (GaN) 1 /
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GaN and related materials /
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11
Antimonide-related stained-layer heterostructures /
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Optical properties of III-V semiconductors: the influence of multi valley band structures.
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Kalt, H.
1996
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Handbook series on semiconductor parameters. 1. Si, Ge, C Diamond, GaAs, GaP, GaSb, InAs, InP, InSb.
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Imperfections in III/V materials /
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Doping in III-V semiconductors.
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Minority carriers in III-V semiconductors : physics and applications /
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Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP /
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Semiinsulating III-V materials : Conference on semiinsulating III-V materials 0006: proceedings : Toronto, 13.05.90-16.05.90.
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Indium phosphide : crystal growth and characterization.
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Semiinsulating III-V materials : Conference on semiinsulating III-V materials 0004 : Hakone, 18.05.1986-21.05.1986.
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