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FGKJ - Plasma processing, etching
IFF
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FGKJ - Plasma processing, etching
IFF
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1
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Halbleiterätzverfahren: Kinetik, Verfahrensgrundlagen und Anwendungsgebiete von nasschemischen Ätzverfahren für Silizium, Galliumarsenid, Galliumphosphid und Indiumphosphid.
Loewe, H.
1990
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Ipat 1981 : Ion and plasma assisted techniques: international conference 3 : Amsterdam, 30.06.81-02.07.81.
1981
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Preparation and characterization : Film preparation and etching by plasma technology : international seminar : Brighton, 25.03.81-27.03.81.
1981
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3
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Book
3
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2
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IFF
ZB
2
IBN-3-4
1
Name
Keppel, P.
1
Loewe, H.
1
Moritz, C.
1
Zach, D.
1
Subject
III - V semiconductor
1
etching
1
plasma etching
1
semiconductor processing
1
silicon
1
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FGKJ - Plasma processing, etching
FGGE - Ion beam surface modification
1
FJKB - Elemental semiconductors
1
FJKC - III - V semiconductors
1
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