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Afanas'ev, V. V.
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Edge, L. F.
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Schubert, Jürgen
Journal Article
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Afanas'ev, V. V.
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Edge, L. F.
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Schubert, Jürgen
Journal Article
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Journal Article
Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3
Afanas'ev, V. V.
2007
Microelectronic engineering, 84 (2007) S. 2278 - 2281
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Journal Article
Band alignment between (100) Si and amorphous LaAlO3,LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces
Afanas'ev, V. V.
2006
Applied physics letters, 88 (2006) S. 032104
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Afanas'ev, V. V.
Edge, L. F.
Schlom, D. G.
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Schubert, Jürgen
Stesmans, A.
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Grundlagen für zukünftige Informationstechnologien
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Center of Nanoelectronic Systems for Information Technology; CNI
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Halbleiter-Nanoelektronik; IBN-1
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Institut für Halbleiterschichten und Bauelemente; ISG-1
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