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Andrä, Michael
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Šmíd, Brˇetislav
Elektronische Eigenschaften; PGI-6
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Elektronische Materialien; PGI-7
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JARA-FIT; JARA-FIT
Controlling Collective States
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Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
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Andrä, Michael
AND
Šmíd, Brˇetislav
Elektronische Eigenschaften; PGI-6
AND
Elektronische Materialien; PGI-7
AND
JARA-FIT; JARA-FIT
Controlling Collective States
AND
Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
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Journal Article
Effect of Cationic Interface Defects on Band Alignment and Contact Resistance in Metal/Oxide Heterojunctions
Andrä, Michael
2020
Advanced electronic materials, 6 (2020) 1, S. 1900808 -
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Research Program
Controlling Collective States
Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
Contributing Institute
Elektronische Eigenschaften; PGI-6
Elektronische Materialien; PGI-7
JARA - HPC; JARA-HPC
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JARA-FIT; JARA-FIT
Scientific Report
2020
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