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Avksentyev, A. Yu. AND Danylyuk, S. V.

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Avksentyev, A. Yu. AND Danylyuk, S. V.

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Contribution to a book 3 Contribution to a conference proceedings 3 Conference Presentation 2 Journal Article 2 Poster 1

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Journal Article

Ultra-high field transport in GaN-based heterostructures

Vitusevich, S. A.
2006

Semiconductor physics, quantum electronics & optoelectronics, 9 (2006) S. 66 - 69

“...Vitusevich, Svetlana...”

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Barrier material improvement in AlGaN/GaN microwave transistors under gamma irradiation treatment

Vitusevich, S. A.
2003

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Ultra-high electric field transport in GaN-based heterostructures

Vitusevich, S. A.
2003

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Hot-electron transport in III-V nitride based two-dimensional gases

Vitusevich, S. A.
2003

Physica status solidi / C (2003) S. 2408 - 2411

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Conference Presentation

The study of low-frequency noise peculiarities in HEMT structures under self-heating conditions

Vitusevich, S. A.
2003

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The study of low-frequency noise peculiarities in HEMT structures under self-heating conditions

Vitusevich, S. A.
2003

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Conference Presentation

Hot electron transport in III-V nitride based two-dimensional gases

Vitusevich, S. A.
2003

“...Vitusevich, Svetlana...”

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Contribution to a book
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Hot electron transport in III-V nitride based two-dimensional gases

Vitusevich, S. A.
2003

“...Vitusevich, Svetlana...”

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Contribution to a book 3 Contribution to a conference proceedings 3 Conference Presentation 2 Journal Article 2 Poster 1

Avksentyev, A. Yu. Danylyuk, S. V. Klein, N. 8 Vitusevich, Svetlana 8 Kochelap, V. A. 7 Sokolov, V. N. 7 more ... Belyaev, A. E. 6 Danilchenko, B. A. 6 Lüth, H. 5 Petrychuk, M. V. 5 Zelenskyi, S. E. 5 Budnik, A. P. 4 Didenko, R. V. 3 Eastman, L. F. 3 Smart, J. 3 Tilak, V. 3 Vertiatchikh, A. 3 Belyaev, A. 2 Kurkain, A. M. 2 Drok, E. 1 Konakova, R. V. 1 Kurakin, A. M. 1 Lytvyn, P. M. 1 see all ... less ...

Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik 7 Grundlagen für zukünftige Informationstechnologien 1

Institut für Bio- und Chemosensoren; ISG-2 7 Institut für Halbleiterschichten und Bauelemente; ISG-1 3 Center of Nanoelectronic Systems for Information Technology; CNI 1

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