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Beschoten, B.
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Lüth, H.
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Schäpers, Thomas
Grundlagen für zukünftige Informationstechnologien
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Beschoten, B.
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Lüth, H.
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Schäpers, Thomas
Grundlagen für zukünftige Informationstechnologien
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Talk (non-conference)
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1
Poster
MOVPE of Cr-doped GaN with respect to spintronic applications
Hardtdegen, H.
2008
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2
Poster
MOVPE of Cr-doped GaN: growth development and layer characteristics
Hardtdegen, H.
2008
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3
Talk (non-conference)
The Structural Properties of Cr-doped GaN by MOVPE
Cho, Y. S.
2007
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4
Talk (non-conference)
MOVPE of GaN: Cr for Spintronics
Cho, Y. S.
2007
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5
Talk (non-conference)
Wachstumsuntersuchungen zur Cr-dotierung in GaN für die Spinelektronik
Hardtdegen, H.
2007
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6
Journal Article
The growth of Cr-doped GaN by MOVPE towards spintronic applications
Cho, Y. S.
2007
Physica status solidi / A, 204 (2007) S. 72 - 77
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7
Poster
Chromium Doped GaN Layers for Spintronics
Kaluza, N.
2006
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8
Conference Presentation
The growth of Cr-doped GaN by MOVPE for spintronics
Cho, Y. S.
2006
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9
Conference Presentation
Chromium doped GaN layers for spintronics
Kaluza, N.
2006
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10
Talk (non-conference)
Optimization of Cr-doped GaN growth by MOVPE
Cho, Y. S.
2006
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Talk (non-conference)
4
Poster
3
Conference Presentation
2
Journal Article
1
Name
Beschoten, B.
Breuer, U.
10
Cho, Y. S.
10
Hardtdegen, Hilde
10
Kaluza, N.
10
Lüth, H.
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Schäpers, Thomas
Schmalbuch, K.
6
Bochem, H. P.
5
Guzenko, V.
5
Fecioru-Morariu, M.
4
Ghadimi, M. R.
4
Grützmacher, Detlev
4
von der Ahe, M.
4
Thillosen, N.
2
Wensel, D.
2
Wenzel, D.
2
Chambard, G.
1
Ruterana, P.
1
Thilosen, N.
1
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Research Program
Grundlagen für zukünftige Informationstechnologien
Contributing Institute
Center of Nanoelectronic Systems for Information Technology; CNI
10
Halbleiter-Nanoelektronik; IBN-1
6
Zentralabteilung für Chemische Analysen; ZCH
6
Institut für Halbleiterschichten und Bauelemente; ISG-1
4
Scientific Report
2006
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2007
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