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Besmehn, A.
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Bourdelle, K.K.
Zentralabteilung für Chemische Analysen; ZCH
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Besmehn, A.
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Bourdelle, K.K.
Zentralabteilung für Chemische Analysen; ZCH
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Journal Article
Integration of LaLuO3 (k 30) as High-k Dielectric on Strained and Unstrained SOI MOSFETs with Replacement Gate Process
Durgun Özben, E.
2011
IEEE Electron Device Letters, 32 (2011) S. 15 - 17
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Journal Article
Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process
Durgun Özben, E.
2011
IEEE Transactions on Electron Devices, 58 (2011) S. 617 - 622
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Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors
Durgun Özben, E.
2011
Journal of vacuum science & technology / B, 29 (2011) S. 01A903
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Electrical characterization of TbScO3/TiN gate stacks in MOS capacitors and MOSFETs on strained and unstrained SOI
Durgun Özben, E.
2010
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4
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Journal Article
3
Contribution to a book
1
Name
Besmehn, A.
Bourdelle, K.K.
Dürgün-Özben, Eylem
4
Lenk, Steffi
4
Mantl, S.
4
Nichau, A.
4
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Schubert, Jürgen
4
Lopes, J.M.J.
3
Zhao, Q.T.
3
Lupták, R.
2
Lopes, J. M. J.
1
Schnee, M.
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Zhao, Q. T.
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Research Program
Grundlagen für zukünftige Informationstechnologien
4
Silicon-based nanostructures and nanodevices for long term nanoelectronics applications
3
Contributing Institute
JARA-FIT; JARA-FIT
4
Zentralabteilung für Chemische Analysen; ZCH
Halbleiter-Nanoelektronik; PGI-9
3
Halbleiter-Nanoelektronik; IBN-1
1
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2011
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2010
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