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Besmehn, A.
Halbleiter-Nanoelektronik; PGI-9
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Zentralabteilung für Chemische Analysen; ZCH
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Besmehn, A.
Halbleiter-Nanoelektronik; PGI-9
AND
Zentralabteilung für Chemische Analysen; ZCH
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1
Journal Article
LaLuO3 higher-k dielectric integration in SOI MOSFETs with a gate-first process
Nichau, A.
2012
Solid state electronics, 71 (2012) S. 19 - 24
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2
Contribution to a book
Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices
Lopes, J.M.J.
2011
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3
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Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs
Nichau, A.
2011
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4
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Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process
Durgun Özben, E.
2011
IEEE Transactions on Electron Devices, 58 (2011) S. 617 - 622
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5
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Integration of LaLuO3 (k 30) as High-k Dielectric on Strained and Unstrained SOI MOSFETs with Replacement Gate Process
Durgun Özben, E.
2011
IEEE Electron Device Letters, 32 (2011) S. 15 - 17
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Journal Article
Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors
Durgun Özben, E.
2011
Journal of vacuum science & technology / B, 29 (2011) S. 01A903
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6
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Journal Article
4
Contribution to a book
2
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1
Name
Besmehn, A.
Lenk, Steffi
6
Lopes, J.M.J.
6
Mantl, S.
6
Nichau, A.
6
Schubert, Jürgen
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Zhao, Q.T.
6
Dürgün-Özben, Eylem
5
Schnee, M.
4
Bourdelle, K.K.
3
Luptak, R.
3
Luysberg, Martina
3
Buca, Dan Mihai
2
Castro, G.R.
2
Habicht, S.
2
Knoll, L.
2
Lupták, R.
2
Mussmann, V.
2
Rubio-Zuazo, J.
2
Breuer, U.
1
Durgun Özben, E.
1
Tiedemann, Andreas
1
Yu, W.
1
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Research Program
Grundlagen für zukünftige Informationstechnologien
6
Silicon-based nanostructures and nanodevices for long term nanoelectronics applications
3
Contributing Institute
Halbleiter-Nanoelektronik; PGI-9
JARA-FIT; JARA-FIT
6
Zentralabteilung für Chemische Analysen; ZCH
Mikrostrukturforschung; PGI-5
3
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