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Besmehn, A.
Mikrostrukturforschung; PGI-5
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Zentralabteilung für Chemische Analysen; ZCH
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Besmehn, A.
Mikrostrukturforschung; PGI-5
AND
Zentralabteilung für Chemische Analysen; ZCH
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Journal Article
LaLuO3 higher-k dielectric integration in SOI MOSFETs with a gate-first process
Nichau, A.
2012
Solid state electronics, 71 (2012) S. 19 - 24
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Contribution to a book
Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices
Lopes, J.M.J.
2011
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Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs
Nichau, A.
2011
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Besmehn, A.
Lenk, Steffi
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Nichau, A.
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Schnee, M.
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Schubert, Jürgen
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Zhao, Q.T.
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Buca, Dan Mihai
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Castro, G.R.
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Dürgün-Özben, Eylem
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Habicht, S.
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Knoll, L.
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Mussmann, V.
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Research Program
Grundlagen für zukünftige Informationstechnologien
3
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Halbleiter-Nanoelektronik; PGI-9
3
JARA-FIT; JARA-FIT
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Mikrostrukturforschung; PGI-5
Zentralabteilung für Chemische Analysen; ZCH
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