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Bourdelle, K.K.
Halbleiter-Nanoelektronik; PGI-9
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Bourdelle, K.K.
Halbleiter-Nanoelektronik; PGI-9
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1
Journal Article
Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source
Zhao, Q.T.
2012
Solid state electronics, 74 (2012) S. 97-101
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Journal Article
Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI
Yu, W.
2012
IEEE electron device letters, 33 (2012) S. 758 - 760
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3
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High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate
Yu, W.
2011
Solid state electronics, 62 (2011) 1, S. 185 - 188
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Conference Presentation
Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source
Zhao, Q.T.
2011
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Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source
Zhao, Q.T.
2011
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Zhang
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Journal Article
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1
Name
Bourdelle, K.K.
Buca, Dan Mihai
5
Mantl, S.
5
Zhang, B.
5
Zhao, Q.T.
5
Fox, A.
4
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Hartmann, J.M.
3
Lupták, R.
3
Richter, S.
3
Schmidt, M.
3
Yu, W.J.
3
Hartmann, J.-M.
2
Luptak, R.
2
Wang, X.
2
Yu, W.
2
Lenk, Steffi
1
Lopes, J.M.
1
Luysberg, M.
1
Mussler, G.
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Nichau, A.
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Research Program
Grundlagen für zukünftige Informationstechnologien
5
Contributing Institute
Halbleiter-Nanoelektronik; PGI-9
JARA-FIT; JARA-FIT
5
Mikrostrukturforschung; PGI-5
1
Scientific Report
2011
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2012
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