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Bourdelle, K.K.
Grundlagen für zukünftige Informationstechnologien
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Bourdelle, K.K.
Grundlagen für zukünftige Informationstechnologien
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Journal Article
High mobility strained Si(0.5)Ge(0.5)/SSOI short channel field effect transistors with TiN/GdScO(3) gate stack
Minamisawa, R.A.
2011
Microelectronic engineering, 88 (2011) S. 2955 - 2958
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...Özben,
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.D....
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Bourdelle, K.K.
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Grundlagen für zukünftige Informationstechnologien
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Halbleiter-Nanoelektronik; PGI-9
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