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1

Journal Article

Mapping the band structure of GeSbTe phase change alloys around the Fermi level

Kellner, J.
2018

Communications Physics, 1 (2018) 1, S. 5

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2

Journal Article

Exploring the subsurface atomic structure of the epitaxially grown phase-change material Ge2 Sb2 Te5

Kellner, J.
2017

Physical Review B Physical review / B, 96 96 (2017 2017) 24 24, S. 245408 245408

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3

Journal Article

Electrical Spin Injection into InN Semiconductor Nanowires

Heedt, Sebastian
2012

Nano letters, 12 9, S. 4437 - 4443

4

Journal Article

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

Limbach, F.
2011

Journal of applied physics, 109 (2011) 1, S. 014309 -

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5

Journal Article

Surface-induced effects in GaN nanowires

Calarco, R.
2011

Journal of materials research, 26 (2011) S. 2157 - 2168

6

Journal Article

Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy

Stoica, T.
2011

IEEE journal of selected topics in quantum electronics, 17 (2011) S. 859 - 868

7

Journal Article

Structural and optical properties of InGaN - GaN nanowire heterostructures grown by Molecular Beam Epitaxy

Limbach, F.
2011

Journal of applied physics, 22 (2011) S. 014309

Get full text Published under German "Allianz" Licensing conditions on 2011-01-14. Available in OpenAccess from 2011-01-14

8

Journal Article

Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layers

Schumann, T.
2011

Nanotechnology, 22 (2011) S. 095603

9

Journal Article

Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

Gotschke, T.
2011

Applied physics letters, 98 (2011) S. 103102

Get full text Published under German "Allianz" Licensing conditions on 2011-03-08. Available in OpenAccess from 2011-03-08

10

Journal Article

Properties of uniform diameter InN nanowires obtained under Si doping

Gotschke, T.
2011

Nanotechnology, 22 (2011) S. 125704

11

Journal Article

Highly polarized Raman scattering anisotropy in single GaN nanowires

Schäfer-Nolte, E. O.
2010

Applied physics letters, 96 (2010) 9, S. 091907 -

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12

Journal Article

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires

Schäfer-Nolte, E. O.
2010

Nanotechnology, 21 (2010) 31, S. 315702 -

13

Journal Article

Raman scattering on intrinsic surface electron accumulation of InN nanowires

Jeganathan, K.
2010

Applied physics letters, 97 (2010) 9, S. 093104 -

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14

Journal Article

Quantum transport in narrow-gap semiconductor nanocolumns

Lüth, H.
2010

Physica status solidi / C, 7 (2010) S. 386 - 389

15

Journal Article

Josephson supercurrent in Nb/InN-nanowire/Nb junctions

Frielinghaus, R.
2010

Applied physics letters, 96 (2010) S. 132504

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16

Journal Article

Universal conductance fluctuations and localization effects in InN nanowires connected in parallel

Alagha, S.
2010

Journal of applied physics, 108 (2010) S. 113704

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17

Journal Article

Formation of GaN nanodots on Si (111) by droplet nitridation

Debnath, R. K.
2009

Journal of crystal growth, 311 (2009) S. 3389 - 3394

18

Journal Article

Spin-orbit coupling and phase-coherent transport in InN nanowires

Petersen, G.
2009

Physical Review B Physical review / B, 80 80 (2009 2009) 12 12, S. 125321 125321

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19

Journal Article

Electrical transport properties of single undoped and n-type doped InN nanowires

Richter, T.
2009

Nanotechnology, 20 (2009) S. 405206

20

Journal Article

Raman scattering of phonon-plasmon coupled modes in self-assemled GaN nanowires

Jeganathan, K.
2009

Journal of applied physics, 105 (2009) S. 123707

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