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Cherepanov, V.
Center of Nanoelectronic Systems for Information Technology; CNI
AND
Grenz- und Oberflächen; IBN-3
Poster
Grundlagen für zukünftige Informationstechnologien
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Cherepanov, V.
Center of Nanoelectronic Systems for Information Technology; CNI
AND
Grenz- und Oberflächen; IBN-3
Poster
Grundlagen für zukünftige Informationstechnologien
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Select result number 1
1
Poster
Silver, oxygen and hydrogen deposited on the Bi terminated prestructured Si/Ge surface
Cherepanov, V.
2008
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2
Poster
Symmetry breaking in the growth of 2D islands on Si(111)
Romanyuk, K.
2008
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3
Poster
Stepped Si(111) surfaces as template for the growth of nanostructures
Cherepanov, V.
2007
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4
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Nucleation pathway and scaling of 2D silicon islands density on Si(111)-7X7
Cherepanov, V.
2007
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5
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Non-standard scaling of the 2D Si islands density on Si(111)-7x7
Filimonov, S. N.
2007
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6
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Optimized Ge nanowire arrays on Si by modified surfactant mediated epitaxy
Romanyuk, K.
2007
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6
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Poster
Name
Cherepanov, V.
Voigtländer, B.
6
Romanyuk, K.
3
Filimonov, S.
1
Filimonov, S. N.
1
Hervieu, Y.
1
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Hervieu, Yu. Yu.
1
Itoh, K.M.
1
Myslivecek, J.
1
Sekiguchi, T.
1
Yoshida, S.
1
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Research Program
Grundlagen für zukünftige Informationstechnologien
Contributing Institute
Center of Nanoelectronic Systems for Information Technology; CNI
Grenz- und Oberflächen; IBN-3
JARA-FIT; JARA-FIT
6
Scientific Report
2007
4
2008
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