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Dürgün-Özben, Eylem
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Schubert, Jürgen
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Zhao, Q.T.
Journal Article
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Dürgün-Özben, Eylem
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Schubert, Jürgen
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Zhao, Q.T.
Journal Article
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Journal Article
Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process
Durgun Özben, E.
2011
IEEE Transactions on Electron Devices, 58 (2011) S. 617 - 622
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2011
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2
Journal Article
LaScO3 as higher-k dielectric for p-MOSFETs
Durgun Özben, E.
2011
Microelectronic engineering, 88 (2011) S. 1323 - 1325
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3
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Integration of LaLuO3 (k 30) as High-k Dielectric on Strained and Unstrained SOI MOSFETs with Replacement Gate Process
Durgun Özben, E.
2011
IEEE Electron Device Letters, 32 (2011) S. 15 - 17
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4
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Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors
Durgun Özben, E.
2011
Journal of vacuum science & technology / B, 29 (2011) S. 01A903
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5
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High mobility strained Si(0.5)Ge(0.5)/SSOI short channel field effect transistors with TiN/GdScO(3) gate stack
Minamisawa, R.A.
2011
Microelectronic engineering, 88 (2011) S. 2955 - 2958
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Bourdelle, K.K.
5
Dürgün-Özben, Eylem
Lopes, J.M.J.
5
Mantl, S.
5
Schubert, Jürgen
Zhao, Q.T.
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Lenk, Steffi
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Nichau, A.
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Besmehn, A.
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Lupták, R.
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Schnee, M.
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Buca, Dan Mihai
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Hartmann, J.M.
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Minamisawa, R.A.
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Mussmann, V.
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Schmidt, M.
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Research Program
Grundlagen für zukünftige Informationstechnologien
5
Silicon-based nanostructures and nanodevices for long term nanoelectronics applications
3
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Halbleiter-Nanoelektronik; PGI-9
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JARA-FIT; JARA-FIT
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Zentralabteilung für Chemische Analysen; ZCH
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