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Dittmann, Regina
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Funck, Carsten
Controlling Electron Charge-Based Phenomena
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Dittmann, Regina
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Funck, Carsten
Controlling Electron Charge-Based Phenomena
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Contribution to a conference proceedings
Atomistic Investigation of the Schottky Contact Conductance Limits at SrTiO3 based Resistive Switching Devices
Funck, Carsten
2018
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Poster
DFTNEGF Current Transport Simulations of Resistive Switching Devices
Funck, Carsten
2018
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Anionic and cationic stoichiometry variations in the conductive filament of valence change memristive devices
Bäumer, Christoph
2018
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Theoretical description of the current conduction through the Schottky barrier in SrTiO3/Pt based resistive switching devices
Funck, Carsten
2018
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A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO 3 -Based Memory Cell
Funck, Carsten
2018
Advanced electronic materials, 4 (2018) 7, S. 1800062 -
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Poster
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Contribution to a conference proceedings
1
Journal Article
1
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Dittmann, Regina
Funck, Carsten
Menzel, Stephan
5
Waser, R.
5
Bäumer, Christoph
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Martin, Manfred
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Schmidt, Peter C.
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Cooper, D.
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Heisig, Thomas
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Hensling, Felix
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Marchewka, A.
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Marchewka, Astrid
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Müller, Phillip
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Schneider, Claus Michael
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Research Program
Controlling Electron Charge-Based Phenomena
Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
1
Contributing Institute
Elektronische Materialien; PGI-7
5
JARA-FIT; JARA-FIT
5
Elektronische Eigenschaften; PGI-6
1
JARA - HPC; JARA-HPC
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