JuLib | Articles & more - {"Mikrostrukturforschung; PGI-5"}

“...Mikrostrukturforschung; PGI-5 Mikrostrukturforschung...”
Get full text Published on 2019-03-27. Available in OpenAccess from 2020-03-27. Get full text Published on 2019-03-27. Available in OpenAccess from 2020-03-27.

9

Journal Article

Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM

Zhang, Lei
2018

The philosophical magazine, 98 (2018) 34, S. 3072 - 3085

“...Mikrostrukturforschung; PGI-5 Mikrostrukturforschung...”

10

Journal Article

Resistive switching in optoelectronic III-V materials based on deep traps

Schnedler, M.
2018

Scientific reports, 8 (2018) 1, S. 9483

“...Mikrostrukturforschung; PGI-5 Mikrostrukturforschung...”
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11

Journal Article

Electron affinity and surface states of GaN m -plane facets: Implication for electronic self-passivation

Portz, V.
2018

Physical Review B Physical review / B, 97 97 (2018 2018) 11 11, S. 115433 115433

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12

Journal Article

Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

Huang, Bo-Chao
2018

ACS nano, 12 (2018) 2, S. 1089 - 1095

“...Mikrostrukturforschung; PGI-5 Mikrostrukturforschung...”

13

Journal Article

Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

Hsiao, F.-M.
2017

Journal of applied physics, 121 (2017) 1, S. 015701 -

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14

Journal Article

Fermi-level pinning and intrinsic surface states of Al$_{1−x}$In$_{x}$N(101¯0) surfaces

Portz, V.
2017

Applied physics letters, 110 (2017) 2, S. 022104 -

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15

Poster

Polarity Dependent Fermi Level Pinning on GaN m-Plane Surfaces

Schnedler, Michael
2016

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16

Conference Presentation

Quantitative description of light-excited scanning tunneling spectroscopy

Schnedler, Michael
2016

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17

Conference Presentation

Investigation of AlInN/GaN heterostructures by scanning Tunneling and Transmission electron microscopy

Portz, Verena
2016

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18

Conference Presentation

How can band offsets in III-V nanowires be determined correctly by scanning tunneling spectroscopy?

Ebert, Philipp
2016

“...Mikrostrukturforschung; PGI-5 Mikrostrukturforschung...”

19

Journal Article

Importance of quantum correction for the quantitative simulation of photoexcited scanning tunneling spectra of semiconductor surfaces

Schnedler, M.
2016

Physical Review B Physical review / B, 93 93 (2016 2016) 19 19, S. 195444 195444

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20

Journal Article

Lazarevicite-type short-range ordering in ternary III-V nanowires

Schnedler, M.
2016

Physical Review B Physical review / B, 94 94 (2016 2016) 19 19, S. 195306 195306

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