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Fox, A.
Halbleiter-Nanoelektronik; PGI-9
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Fox, A.
Halbleiter-Nanoelektronik; PGI-9
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1
Journal Article
Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source
Zhao, Q.T.
2012
Solid state electronics, 74 (2012) S. 97-101
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Journal Article
Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI
Yu, W.
2012
IEEE electron device letters, 33 (2012) S. 758 - 760
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Conference Presentation
Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source
Zhao, Q.T.
2011
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Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source
Zhao, Q.T.
2011
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Bourdelle, K.K.
4
Buca, Dan Mihai
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Fox, A.
Mantl, S.
4
Zhang, B.
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Zhao, Q.T.
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Richter, S.
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Schmidt, M.
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Yu, W.J.
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Hartmann, J.-M.
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Hartmann, J.M.
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Luptak, R.
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Lupták, R.
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Research Program
Grundlagen für zukünftige Informationstechnologien
4
Contributing Institute
Halbleiter-Nanoelektronik; PGI-9
JARA-FIT; JARA-FIT
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