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Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric

Volk, C.
2010

Applied physics / A, 100 (2010) S. 305 - 308

63

Micromanipulation of individual InAs nanowires

Flöhr, K.
2010

64

LaLuO3 as high-k gate dielectric for InAs nanowire structures

Volk, C.
2010

Semiconductor science and technology, 25 (2010) S. 085001

65

Spin-orbit coupling and phase coherence in InAs nanowires

Estévez Hernández, S.
2010

Physical Review B Physical review / B, 82 82 (2010 2010) 23 23, S. 235303 235303

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66

Contribution to a book
Contribution to a conference proceedings

Strain-enhanced electron mobility anisotropy in InxGa1-xAs/InP two-dimensional electron gases

Akabori, M.
2010

Physica / E, 42 (2010) S. 1130 - 1133

67

Influence of silicon doping on the SA-MOVPE of InAs nanowires

Sladek, K.
2010

68

Electronic transport in InAs nanowires controlled by high-k dielectric gates

Weis, K.
2009

69

Anisotropy of two-dimensional electron mobilities in InP/InGaAs/InP(001)

Akabori, M.
2009

70

Influence of silicon doping on the SA-MOVPE of InAs nanowires

Penz, A.
2009

71

MOVPE growth and characterization of dopes GaAs/AlGaAs core-shell nanowires

Sladek, K.
2009

72

Catalyst free MOVPE of GaAs- and InAs-BAsed Nanowires in N2 atmosphere

Sladek, K.
2009

73

Origin and limiting mechanism of induced nonequilibrium currents in gated two-dimensional electron systems

Ruhe, N.
2009

Physical Review B Physical review / B, 80 80 (2009 2009) 11 11, S. 115336 115336

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74

Influence of growth temperature on GaN:Cr incorporation and structural properties in MOVPE

Cho, Y. S.
2009

Journal of crystal growth, 312 (2009) 1, S. 1 - 9

75

Contribution to a book

Low frequency noise in 2DEG channel of AlGaN/GaN heterostructures scaled to nanosize width

Vitusevich, S. A.
2009

76

Spin-orbit coupling in GaxIn1-xAs/InP two-dimensional electron gases and quantum wire structures

Schäpers, T.
2009

Semiconductor science and technology, 24 (2009) S. 064001

77

Anisotropy of two-dimensional electron mobilities in InP/InGaAs

Akabori, M.
2009

78

Strain-enhanced electron mobility anisotropy and piezoelectric scattering in InGaAs/InP 2DEGs

Akabori, M.
2009

79

Anisotropic electron transport of two-dimensional electron gases in compressively-strained, lattice-matched, and tensilely-strained InGaAs on InP(001)

Akabori, M.
2009

80