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Hartmann, J.M.
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Hartmann, J.M.
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1
Journal Article
High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate
Yu, W.
2011
Solid state electronics, 62 (2011) 1, S. 185 - 188
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Conference Presentation
MOSFETs with High Mobility Channel Materials and Higher-k/Metal Gate Stack
Yu, W.
2010
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3
Conference Presentation
High mobility Si-Ge channel and high-k materials for NanoMOSFETs
Zhao, Q. T.
2010
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MOSFETs with High Mobility Channel Materials and Higher-k/Metal Gate Stack
Yu, W.
2010
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Conference Presentation
Strained-SiGe p-MOSFET with LaLuO3 as high-k gate dielectric and TiN as metal gate
Yu, W.
2010
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5
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Conference Presentation
3
Contribution to a book
1
Contribution to a conference proceedings
1
Journal Article
1
Name
Buca, Dan Mihai
5
Hartmann, J.M.
Mantl, S.
5
Nichau, A.
5
Yu, W.
5
Zhang, B.
5
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Bourdelle, K.K.
4
Dürgün-Özben, Eylem
4
Lopes, J. M. J.
4
Schubert, Jürgen
4
Zhao, Q. T.
4
Lenk, Steffi
3
Luptak, R.
3
Feste, S. F.
1
Ghyselen, B.
1
Holländer, Bernhard
1
Kernevez, N.
1
Lopes, J.M.
1
Lupták, R.
1
Luysberg, M.
1
Minamisawa, R. A.
1
Wang, X.
1
Zhao, Q.T.
1
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Research Program
Grundlagen für zukünftige Informationstechnologien
5
Contributing Institute
JARA-FIT; JARA-FIT
5
Halbleiter-Nanoelektronik; IBN-1
4
Halbleiter-Nanoelektronik; PGI-9
1
Mikrostrukturforschung; PGI-5
1
Scientific Report
2010
4
2011
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