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Heuken, M.
Publications database
Poster
Halbleiterschichtsysteme und Mesoskopische Strukturen
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Heuken, M.
Publications database
Poster
Halbleiterschichtsysteme und Mesoskopische Strukturen
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Select result number 1
1
Poster
Investigation of AIN nucleation layer growth on sapphire substrates with respect to GaN buffer characteristics for HEMT application
Nastase, N.
2001
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2001
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On the influence of the nucleation parameters on GaN buffer layer properties used for HEMT application
Nastase, N.
2001
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Investigations on the influence of traps in AlGaN/GaN HEMTs
Wolter, M.
2001
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Alam, A.
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Heuken, M.
Lüth, H.
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Carius, R.
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Hardtdegen, Hilde
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Nastase, N.
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Schmidt, R.
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Bay, H.
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Fox, P. T.
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Javorka, P.
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Kordos, P.
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Marso, M.
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Wolter, M.
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Research Program
Halbleiterschichtsysteme und Mesoskopische Strukturen
Halbleiterbauelemente und Analytik
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Ionentechnik
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Institut für Halbleiterschichten und Bauelemente; ISG-1
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Institut für Photovoltaik; IPV
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