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1

Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al 2 O 3 /TiO x ‐Based Memristive Devices

Aussen, Stephan
2023

Advanced electronic materials, 9 (2023) 12, S. 2300520

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2

Journal Article

The MoS 2 -Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS 2 Band Structure

Wördenweber, Henrik
2023

The journal of physical chemistry / C, 127 (2023) 22, S. 10878–10887

OpenAccess

3

Journal Article

Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors

Chekol, Solomon Amsalu
2022

Advanced functional materials, 32 (2022) 15, S. 2111242 -

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4

Journal Article

Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation

Chekol, Solomon Amsalu
2022

Advanced electronic materials, 8 (2022) 11, S. 2200549 -

OpenAccess

5

Journal Article

Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition

Wördenweber, Henrik
2022

Scientific reports, 12 (2022) 1, S. 18743

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6

Journal Article

Intrinsic RESET Speed Limit of Valence Change Memories

von Witzleben, Moritz
2021

ACS applied electronic materials, 3 (2021) 12, S. 5563 - 5572

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7

Journal Article

Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns

Bengel, Christopher
2021

Frontiers in neuroscience, 15 (2021) S. 661856

OpenAccess

8

Journal Article

Comprehensive model for the electronic transport in Pt/SrTi O 3 analog memristive devices

Funck, Carsten
2020

Physical Review B Physical review / B, 102 102 (2020 2020) 3 3, S. 035307 035307

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9

Journal Article

Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models

Bengel, Christopher
2020

IEEE transactions on circuits and systems / 1 Regular papers, 67 (2020) 12, S. 4618 - 4630

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10

Journal Article

Exploiting the switching dynamics of HfO2/TiOx-based ReRAM devices for reliable analogue memristive behaviour

Cüppers, Felix
2019

APL materials, 7 (2019) S. 091105

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11

Journal Article

Space charges and defect concentration profiles at complex oxide interfaces

Gunkel, Felix
2016

Physical Review B Physical review / B, 93 93 (2016 2016) 24 24, S. 245431 245431

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12

Journal Article

The influence of non-stoichiometry on the switching kinetics of strontium-titanate ReRAM devices

Fleck, K.
2016

Journal of applied physics, 120 (2016) 24, S. 244502 -

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