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Lüth, H.
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Förster, A.
Institut für Halbleiterschichten und Bauelemente; ISG-1
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Lüth, H.
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Förster, A.
Institut für Halbleiterschichten und Bauelemente; ISG-1
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Select result number 21
21
Poster
Energy spectrum of 2DEG in the field-effect-induced barrier structures controlled by magnetic field
Sheka, D. I.
2004
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Select result number 22
22
Journal Article
Homogeneity analysis of ion-implanted resonant tunneling diodes for applications in digital logic circuits
Malindretos, J.
2002
Superlattices and microstructures, 31 (2002) S. 315 - 325
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Select result number 23
23
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Density-matrix description of a quantum dot system with variable laterial confinement in the single-electron tunneling regime
Indlekofer, K. M.
2002
Physica / B, 314 (2002) S. 499 - 502
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24
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Resonant tunneling effect in a periodically modulated electrical field
Vitusevich, S. A.
2002
Physica / E, 13 (2002) S. 811 - 814
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25
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A vertical resonant tunneling transistor for application in digital logic circuits
Stock, J.
2001
IEEE Transactions on Electron Devices, 48 (2001) S. 1028
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26
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Resonant spectroscopy of electric-field-induced superlattices
Vitusevich, S.
2001
Journal of applied physics, 90 (2001) S. 2857
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Grundlagen für zukünftige Informationstechnologien
13
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
11
Halbleiterschichtsysteme und Mesoskopische Strukturen
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Schichtsysteme und Bauelemente der Supraleiterelektronik
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Institut für Halbleiterschichten und Bauelemente; ISG-1
Center of Nanoelectronic Systems for Information Technology; CNI
17
Institut für Bio- und Chemosensoren; ISG-2
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Institut für Grenzflächen und Vakuumtechnologien; ISG-3
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