JuLib | Articles & more - {"JARA-FIT; JARA-FIT"}

1

Contribution to a book
Contribution to a conference proceedings

Planar and Nanowire Schottky Barrier MOSFETs on SOI with NiSi and Epitaxial NiSi2 Contacts

Zhao, Q.T.
2012

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

2

Talk (non-conference)

Planar and Nanowire Schottky Barrier MOSFETs on SOI with NiSi and Epitaxial NiSi2 Contacts

Zhao, Q.T.
2012

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

3

Contribution to a book
Contribution to a conference proceedings

Strained Silicon Nanowire Array MOSFETs with High-k/Metal Gate Stack

Richter, S.
2012

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

4

Contribution to a book
Contribution to a conference proceedings

Nanowire and Planar UTB SOI Schottky Barrier MOSFETs with Dopant Segregation

Knoll, L.
2012

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

5

Journal Article

p-Type Ion Implantation in Tensile Si/Compressive Si0.5Ge0.5/Tensile Strained Si Heterostructures

Minamisawa, R.A.
2012

Journal of the Electrochemical Society, 159 (2012) S. H44 - H51

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

6

Journal Article

20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain

Knoll, L.
2012

Solid state electronics, 71 (2012) S. 88 - 92

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

7

Journal Article

Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

Zhao, Q.T.
2012

Solid state electronics, 74 (2012) S. 97-101

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

8

Journal Article

Hole Transport in Strained Si0.5Ge0.5 QW-MOSFETs with <110> and <100> Channel Orientations

Minamisawa, R.A.
2012

IEEE electron device letters, 33 (2012) S. 1105 - 1107

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

9

Journal Article

Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI

Yu, W.
2012

IEEE electron device letters, 33 (2012) S. 758 - 760

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

10

Journal Article

Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors

Durgun Özben, E.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01A903

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

11

Journal Article

Integration of LaLuO3 (k 30) as High-k Dielectric on Strained and Unstrained SOI MOSFETs with Replacement Gate Process

Durgun Özben, E.
2011

IEEE Electron Device Letters, 32 (2011) S. 15 - 17

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

12

Conference Presentation

Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source

Zhao, Q.T.
2011

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

13

Contribution to a book
Contribution to a conference proceedings

Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source

Zhao, Q.T.
2011

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

14

Journal Article

Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process

Durgun Özben, E.
2011

IEEE Transactions on Electron Devices, 58 (2011) S. 617 - 622

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

15

Conference Presentation

20nm gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi2 source/drain

Knoll, L.
2011

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

16

Journal Article

High mobility strained Si(0.5)Ge(0.5)/SSOI short channel field effect transistors with TiN/GdScO(3) gate stack

Minamisawa, R.A.
2011

Microelectronic engineering, 88 (2011) S. 2955 - 2958

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

17

Conference Presentation

NiSi Nano-contacts to Strained and Unstrained Silicon Nanowires

Habicht, S.
2011

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

18

Contribution to a book
Contribution to a conference proceedings

20nm gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi2 source/drain

Knoll, L.
2011

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

19

Contribution to a book
Contribution to a conference proceedings

NiSi Nano-contacts to Strained and Unstrained Silicon Nanowires

Habicht, S.
2011

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

20

Journal Article

High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Yu, W.
2011

Solid state electronics, 62 (2011) 1, S. 185 - 188

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

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