JuLib | Articles & more - {2016}

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1

Conference Presentation

Analysis of the Two-Part SET Switching Process in STO-based ReRAM

La Torre, C.
2016

“...2016...”

2

Journal Article

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

Starschich, S.
2016

Applied physics letters, 108 (2016) 3, S. 032903 -

“...2016...”
OpenAccess OpenAccess

3

Journal Article

Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides

Fleck, Karsten
2016

Physical review applied, 6 (2016) 6, S. 064015

“...2016...”
OpenAccess OpenAccess

4

Journal Article

The influence of non-stoichiometry on the switching kinetics of strontium-titanate ReRAM devices

Fleck, K.
2016

Journal of applied physics, 120 (2016) 24, S. 244502 -

“...2016...”
OpenAccess OpenAccess

5

Contribution to a book

Modeling the VCM- and ECM-Type Switching Kinetics

Menzel, Stephan
2016

“...2016...”

6

Contribution to a book

Universal Switching Behavior

Ielmini, D.
2016

“...2016...”

7

Contribution to a conference proceedings

Switching Kinetics of Ta2O5-based ReRAM: Limiting Processes and Ultimate Switching Speed

Menzel, Stephan
2016

“...2016...”

8

Contribution to a conference proceedings

A 2D axisymmetric dynamic drift-diffusion model for numerical simulation of resistive switching phenomena in metal oxides

Marchewka, A.
2016

“...2016...”

9

Contribution to a conference proceedings

Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices

Fleck, K.
2016

“...2016...”

10

Conference Presentation

Simulation and Modelling of the Switching Dynamics in Electrochemical Metallization and Valence Change Memory Cells

Menzel, Stephan
2016

“...2016...”

11

Contribution to a book
Contribution to a conference proceedings

KMC simulation of the electroforming, set and reset processes in redox-based resistive switching devices

Abbaspour, Elhameh
2016

“...2016...”

12

Conference Presentation

Impact of the Nonlinear Switching Kinetics on Logic Circuits based on Memristive Switching Devices

Menzel, Stephan
2016

“...2016...”

13

Contribution to a book
Contribution to a conference proceedings

Lowering Forming Voltage and Forming-Free Behavior of Ta2O5 ReRAM Devices

Kim, Wonjoo
2016

“...2016...”

14

Journal Article

Nonlinearity analysis of TaOX redox-based RRAM

Kim, Wonjoo
2016

Microelectronic engineering, 154 (2016) S. 38 - 41

“...2016...”

15

Journal Article

3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaO$_{X}$ /Pt-ReRAM Devices

Kim, W.
2016

IEEE electron device letters, 37 (2016) 5, S. 564 - 567

“...2016...”

16

Journal Article

Impact of oxygen exchange reaction at the ohmic interface in Ta$_{2}$ O$_{5}$ -based ReRAM devices

Kim, Wonjoo
2016

Nanoscale, 8 (2016) 41, S. 17774 - 17781

“...2016...”

17

Conference Presentation

Filamentary versus area-scalilng memristive switching in oxide elements

Waser, R.
2016

“...2016...”

18

Talk (non-conference)

Energy efficient computing by redox-based memristive oxide elements

Waser, R.
2016

“...2016...”

19

Conference Presentation

Fundamental ingredients of redox-based memristive switching in metal oxides

Waser, R.
2016

“...2016...”

20

Conference Presentation

Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series

Hardtdegen, Alexander
2016

“...2016...”

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