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Rana, Vikas

Elektronische Materialien; PGI-7

2016

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Rana, Vikas

Elektronische Materialien; PGI-7

2016

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Journal Article 7 Contribution to a conference proceedings 4 Conference Presentation 2 Contribution to a book 1

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1

Conference Presentation

Lowering Forming Voltage and Forming-Free Behavior of Ta2O5 ReRAM Devices

Kim, Wonjoo
2016

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2

Contribution to a conference proceedings

Lowering forming voltage and forming-free behavior of Ta2O5 ReRAM devices

Kim, Wonjoo
2016

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3

Contribution to a conference proceedings

Ultrafast switching in Ta2O5-based resistive memories

Havel, V.
2016

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4

Journal Article

Nonlinearity analysis of TaOX redox-based RRAM

Kim, Wonjoo
2016

Microelectronic engineering, 154 (2016) S. 38 - 41

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Journal Article

3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaO$_{X}$ /Pt-ReRAM Devices

Kim, W.
2016

IEEE electron device letters, 37 (2016) 5, S. 564 - 567

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6

Journal Article

Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process

Marchewka, Astrid
2016

Advanced Electronic Materials, 2 (2016) 1, S. n/a - n/a

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Contribution to a book
Contribution to a conference proceedings

Lowering Forming Voltage and Forming-Free Behavior of Ta2O5 ReRAM Devices

Kim, Wonjoo
2016

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Journal Article

Impact of oxygen exchange reaction at the ohmic interface in Ta$_{2}$ O$_{5}$ -based ReRAM devices

Kim, Wonjoo
2016

Nanoscale, 8 (2016) 41, S. 17774 - 17781

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Journal Article

Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

Kim, Wonjoo
2016

Scientific reports, 6 (2016) S. 36652 -

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Journal Article

Nanoscale cation motion in TaO$_{x}$, HfO$_{x}$ and TiO$_{x}$ memristive systems

Wedig, Anja
2016

Nature nanotechnology, 11 (2016) S. 67-74

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Contribution to a conference proceedings

Switching Kinetics of Ta2O5-based ReRAM: Limiting Processes and Ultimate Switching Speed

Menzel, Stephan
2016

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12

Conference Presentation

Fundamental ingredients of redox-based memristive switching in metal oxides

Waser, R.
2016

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Journal Article

Realization of Minimum and Maximum Gate Function in Ta$_{2}$O$_{5}$-based Memristive Devices

Breuer, Thomas
2016

Scientific reports, 6 (2016) S. 23967 -

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Publications database 13 Open Access 2

Journal Article 7 Contribution to a conference proceedings 4 Conference Presentation 2 Contribution to a book 1

Rana, Vikas Waser, R. 11 Menzel, Stephan 10 Kim, Wonjoo 8 Rodenbücher, Christian 3 Roesgen, Bernd 3 more ... Rösgen, Bernd 3 Wouters, D. 3 Breuer, Thomas 2 Fleck, K. 2 Havel, V. 2 Linn, Eike 2 Skaja, Katharina 2 Waser, Rainer 2 Wouters, D. J. 2 Wouters, Dirk J. 2 Adepalli, Kiran K. 1 Bottger, U. 1 Buca, Dan Mihai 1 Böttger, U. 1 Chattopadhyay, Anupam 1 Cho, Deok-Yong 1 Dittmann, Regina 1 Du, Hongchu 1 Gunkel, F. 1 Guo, Yuzheng 1 Hardtdegen, Alexander 1 Hasegawa, Tsuyoshi 1 Hoffmann-Eifert, Susanne 1 Jia, Chun-Lin 1 see all ... less ...

Controlling Electron Charge-Based Phenomena 7 Controlling Collective States 6

Elektronische Materialien; PGI-7 JARA Institut Green IT; PGI-10 5 JARA-FIT; JARA-FIT 3 Halbleiter-Nanoelektronik; PGI-9 1 Mikrostrukturforschung; PGI-5 1

2016

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