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Schroeder, K.

2002

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Schroeder, K.

2002

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Journal Article 6 Conference Presentation 2 Poster 1 Talk (non-conference) 1

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Journal Article

Relaxation of small molecules, an ab initio study

Cao, Y.
2002

Communications in theoretical physics, 37 (2002) S. 597

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Journal Article

Stable structure of Sb monolayer on a strained Ge(111) substrate

Cao, Y.
2002

Chinese physics letters, 19 (2002) S. 259

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Talk (non-conference)

Einfluss von Surfactant-Schichten auf das epitaktische Wachstum : Struktur, Diffusion, Clusterbildung und Stufenkanten auf As- und Sb-bedeckten Si(111)-Oberflächen

Schroeder, K.
2002

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Clusters and Steps on Si(111) : surfactant effect due to As and Sb

Antons, A.
2002

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Conference Presentation

The neutral Cd-vacancy complex in Si and Ge

Atodiresei, N.
2002

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Conference Presentation

Simulation von STM-Bildern von Stufenkanten auf As-bedecktem Si(111)

Schroeder, K.
2002

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Journal Article

A novel Sb induced reconstruction of the (113) surface of Ge

Hirnet, A.
2002

Physical review letters, 88 (2002) S. 226102

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Journal Article

Surfactant mediated heteroepitaxy versus homoepitaxy : kinetics for group-IV adatoms on As-passivated Si(111) and Ge(111)

Schroeder, K.
2002

Physical review letters, 88 (2002) S. 046101

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Journal Article

Ad-atom kinetics on surfactant-covered Si(111) : ab initio calculations

Schroeder, K.
2002

Phase transitions, 75 (2002) S. 91 - 99

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Journal Article

Element specific surface reconstructions of islands during surfactant-mediated growth on Si(111)

Antons, A.
2002

Physical review letters, 89 (2002) S. 236101

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Publications database 10 Open Access 3

Journal Article 6 Conference Presentation 2 Poster 1 Talk (non-conference) 1

Schroeder, K. Blügel, Stefan 9 Antons, A. 7 Berger, R. 5 Cao, Y. 2 Zheng-Kuan, J. 2 more ... Albrecht, M. 1 Atodiresei, Nicolae 1 Cherepanov, V. 1 Gierer, M. 1 Hirnet, A. 1 Jenichen, B. 1 Moritz, W. 1 Torrelles, X. 1 Voigtländer, B. 1 von Krosigk, G. 1 see all ... less ...

Kondensierte Materie 10

Theorie III; IFF-TH-III 10 Theorie I; IFF-TH-I 9 Institut für Grenzflächen und Vakuumtechnologien; ISG-3 1

2002

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