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Steins, R.
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Wirtz, K.
Institut für Halbleiterschichten und Bauelemente; ISG-1
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Steins, R.
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Wirtz, K.
Institut für Halbleiterschichten und Bauelemente; ISG-1
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1
Poster
New Approaches for Growth Control of GaN Based HEMT Structures
Hardtdegen, H.
2006
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2
Journal Article
Uniform III-nitride growth in single wafer horizontal MOVPE reactors
Hardtdegen, H.
2005
Physica status solidi / A, 202 (2005) S. 744 - 748
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3
Journal Article
Optimierung eines neuen GaN MOVPE-Wachstumsprozesses mit reduzierten parasitären Depositionen
Steins, R.
2004
Verhandlungen der Deutschen Physikalischen Gesellschaft, 39 (2004) S. 204
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4
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Uniform III-nitride growth in single wafer horizontal MOVPE reactors
Hardtdegen, H.
2004
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5
Journal Article
MOVPE process for horizontal reactors with reduced parasitic deposition
Hardtdegen, H.
2004
Journal of crystal growth, 272 (2004) S. 407 - 414
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6
Conference Presentation
MOVPE process for horizontal reactors with reduced parasitic deposition
Hardtdegen, H.
2004
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7
Conference Presentation
Optimierung eines neuen GaN Prozesses im Hinblick auf Homogenität
Steins, R.
2003
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Alam, A.
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Javorka, P.
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Lüth, H.
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Makarov, Yu. N.
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Schmitt, T.
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Yakovlev, E. V.
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Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
6
Grundlagen für zukünftige Informationstechnologien
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Institut für Halbleiterschichten und Bauelemente; ISG-1
Center of Nanoelectronic Systems for Information Technology; CNI
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