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Waser, R.
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JARA - HPC; JARA-HPC
Controlling Electron Charge-Based Phenomena
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Waser, R.
Publications database
JARA - HPC; JARA-HPC
Controlling Electron Charge-Based Phenomena
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1
Journal Article
HRS Instability in Oxide-Based Bipolar Resistive Switching Cells
Wiefels, Stefan
2020
IEEE transactions on electron devices, 67 (2020) 10, S. 4208 - 4215
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2
Journal Article
A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO 3 -Based Memory Cell
Funck, Carsten
2018
Advanced electronic materials, 4 (2018) 7, S. 1800062 -
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3
Journal Article
Field-enhanced route to generating anti-Frenkel pairs in HfO 2
Schie, Marcel
2018
Physical review materials, 2 (2018) 3, S. 035002
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Ion migration in crystalline and amorphous HfO$_{X}$
Schie, Marcel
2017
The journal of chemical physics, 146 (2017) 9, S. 094508 -
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Waser, R.
Menzel, Stephan
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Schie, Marcel
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Bengel, Christopher
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Dittmann, Regina
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Kopperberg, Nils
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Müller, Michael P.
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Research Program
Controlling Electron Charge-Based Phenomena
Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
3
Advanced Computing Architectures
1
Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM).
1
Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC -
1
Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC -, Teilvorhaben: Forschungszentrum Jülich
1
Contributing Institute
Elektronische Materialien; PGI-7
4
JARA - HPC; JARA-HPC
JARA-FIT; JARA-FIT
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JARA Institut Green IT; PGI-10
1
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