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Wuttig, M.
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Waser, R.
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Wuttig, M.
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1
Poster
DIFFERENT TRANSPORT PROPERTIES AT VERY LOW TEMPERATURES BETWEEN SUBSTOICHIOMETRIC TaOx IN ReRAM CONDUCTIVE FILAMENTS AND IN THIN FILMS
Rosario, C. M. M.
2017
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2
Poster
Ultrafast pulse performance of TiO2 based resistive memory elements
Hermes, C.
2011
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3
Journal Article
Analysis of transient currents during ultrafast switching of TiO2 nanocrossbar devices
Hermes, C.
2011
IEEE Electron Device Letters, 32 (2011) S. 1116 - 1118
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4
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Fast pulse analysis of TiO3 based RRAM nano-crossbar devices
Hermes, C.
2011
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5
Journal Article
Function by defects at the atomic scale - New concepts for non-volatile memories
Waser, R.
2010
Solid state electronics, 54 (2010) S. 830 - 840
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6
Journal Article
The role of defects in resistively switching chalcogenides
Waser, R.
2010
International journal of materials research, 101 (2010) S. 182 - 198
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7
Conference Presentation
Function by defects at the atomic scale - new concepts for non-volatile memories
Waser, R.
2009
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Waser, R.
Wuttig, M.
Salinga, M.
5
Menzel, Stephan
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Bruchhaus, Rainer
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Böttger, U.
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Fleck, K.
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Hermes, C.
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Dittmann, R.
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Schmitz-Kempen, T.
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Wimmer, M.
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Bruns, G.
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Gruns, G.
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Lentz, F.
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Rosario, C. M. M.
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Schönhals, A.
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Sobolev, N. A.
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Thöner, Bo
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Grundlagen für zukünftige Informationstechnologien
6
Controlling Electron Charge-Based Phenomena
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JARA-FIT; JARA-FIT
7
Elektronische Materialien; PGI-7
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Elektronische Materialien; IFF-6
3
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