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Journal Article
Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
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Journal Article
Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
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1
Journal Article
Effect of Cationic Interface Defects on Band Alignment and Contact Resistance in Metal/Oxide Heterojunctions
AndrÀ, Michael
2020
Advanced electronic materials, 6 (2020) 1, S. 1900808 -
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2
Journal Article
Field-enhanced route to generating anti-Frenkel pairs in HfO 2
Schie, Marcel
2018
Physical review materials, 2 (2018) 3, S. 035002
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Ion migration in crystalline and amorphous HfO$_{X}$
Schie, Marcel
2017
The journal of chemical physics, 146 (2017) 9, S. 094508 -
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Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
Controlling Electron Charge-Based Phenomena
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Controlling Collective States
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Elektronische Materialien; PGI-7
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