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Elektronische Materialien; PGI-7
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JARA - HPC; JARA-HPC
Controlling Electron Charge-Based Phenomena
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Elektronische Materialien; PGI-7
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JARA - HPC; JARA-HPC
Controlling Electron Charge-Based Phenomena
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1
Journal Article
HRS Instability in Oxide-Based Bipolar Resistive Switching Cells
Wiefels, Stefan
2020
IEEE transactions on electron devices, 67 (2020) 10, S. 4208 - 4215
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2
Journal Article
An atomistic view on the Schottky barrier lowering applied to SrTiO 3 /Pt contacts
Funck, Carsten
2019
AIP Advances, 9 (2019) 4, S. 045116 -
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3
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Field-enhanced route to generating anti-Frenkel pairs in HfO 2
Schie, Marcel
2018
Physical review materials, 2 (2018) 3, S. 035002
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4
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A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO 3 -Based Memory Cell
Funck, Carsten
2018
Advanced electronic materials, 4 (2018) 7, S. 1800062 -
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Ion migration in crystalline and amorphous HfO$_{X}$
Schie, Marcel
2017
The journal of chemical physics, 146 (2017) 9, S. 094508 -
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Research Program
Controlling Electron Charge-Based Phenomena
Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
4
Advanced Computing Architectures
1
Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM).
1
Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC -
1
Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC -, Teilvorhaben: Forschungszentrum Jülich
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Elektronische Materialien; PGI-7
JARA - HPC; JARA-HPC
JARA-FIT; JARA-FIT
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JARA Institut Green IT; PGI-10
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