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Halbleiter-Nanoelektronik; IBN-1
Holländer, Bernhard
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Feste, S.
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Halbleiter-Nanoelektronik; IBN-1
Holländer, Bernhard
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Feste, S.
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1
Journal Article
Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology
Lupták, R.
2011
Journal of vacuum science & technology / B, 29 (2011) S. 01A301
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2
Talk (non-conference)
Strained Si on Insulator-Fabrication and Applications
Buca, D.
2008
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3
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Large Current Enhancement in n-MOSFETs with Strained Si on Insulator
Mantl, S.
2007
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4
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Strained Silicon on Insulator for Advanced CMOS Devices
Mantl, S.
2007
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5
Journal Article
Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers
Buca, D.
2007
Applied physics letters, 90 (2007) S. 032108
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5
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Journal Article
2
Talk (non-conference)
2
Poster
1
Name
Feste, S.
Holländer, Bernhard
Mantl, S.
5
Buca, Dan Mihai
4
Loo, R.
3
Zhao, Q. T.
3
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Buchholtz, W.
2
Gösele, U.
2
Horstmann, M.
2
Lenk, Steffi
2
Luysberg, Martina
2
Nguyen, D.
2
Reiche, M.
2
Trinkaus, H.
2
Wei, A.
2
Baumann, P.K.
1
Besmehn, A.
1
Breuer, U.
1
Caymax, M.
1
Dürgün-Özben, Eylem
1
Habicht, S.
1
Heiermann, W.
1
Heuken, M.
1
Lopes, J.M.J.
1
Lupták, R.
1
Schnee, M.
1
Schubert, Jürgen
1
Tiedemann, Andreas
1
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Research Program
Grundlagen für zukünftige Informationstechnologien
5
Contributing Institute
Halbleiter-Nanoelektronik; IBN-1
Center of Nanoelectronic Systems for Information Technology; CNI
4
JARA-FIT; JARA-FIT
3
Halbleiter-Nanoelektronik; PGI-9
1
Scientific Report
2007
3
2008
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2011
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