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Institut für Festkörperforschung; IFF
Urban, K.
Open Access
2000
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Institut für Festkörperforschung; IFF
Urban, K.
Open Access
2000
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Journal Article
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1
Journal Article
Symmetric versus non-symmetric structure of the phosphorous vacancy in InP(110)
Ebert, P.
2000
Physical review letters, 84 (2000) S. 5816 - 5819
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2
Journal Article
Effect of dopant atoms on the roughness of III-V semiconductor cleavage surfaces
Quadbeck, W. J.
2000
Applied physics letters, 76 (2000) S. 300 - 302
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3
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Effect of charge carriers on the barrier height for vacancy formation on InP(110) surfaces
Semmler, U.
2000
Applied physics letters, 77 (2000) S. 61 - 63
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Journal Article
Growth kinetics of quasicrystalline and polytetrahedral phases of AI-Pd-Mn, AI-Co, and AI-Fe from the undercooled melt
Schroers, J.
2000
Physical review / B, 61 (2000) S. 14500 - 14506
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4
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Journal Article
4
Name
Urban, K.
Ebert, P.
3
Aballe, L.
1
Chen, C. C.
1
Gebauer, J.
1
Herlach, D. M.
1
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Holland-Moritz, D.
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Horn, K.
1
Krause-Rehberg, R.
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Neugebauer, J.
1
Quadbeck, W. J.
1
Scheffler, M.
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Schroers, J.
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Schwarz, G.
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Semmler, U.
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Erforschung neuer Materialien
3
Festkörperforschung für die Informationstechnik
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Institut für Festkörperforschung; IFF
Scientific Report
2000
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