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Institut für Halbleiterschichten und Bauelemente; ISG-1
Steins, R.
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Institut für Halbleiterschichten und Bauelemente; ISG-1
Steins, R.
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Conference Presentation
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Select result number 41
41
Conference Presentation
GaN MOVPE growth : a comparison between modeling and experimental results
Nastase, N.
2002
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Publications database
41
Open Access
2
Document Type
Conference Presentation
16
Poster
11
Journal Article
10
Talk (non-conference)
3
Contribution to a book
1
Contribution to a conference proceedings
1
Name
Steins, R.
Hardtdegen, Hilde
40
Kaluza, N.
38
Cho, Y. S.
19
Lüth, H.
11
Sofer, Z.
11
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Schmidt, R.
9
Zettler, J.-T.
9
Thillosen, N.
7
Wirtz, K.
7
Marso, M.
6
Heidelberger, G.
5
von der Ahe, M.
5
Alam, A.
4
Beccard, R.
4
Haberland, K.
4
Javorka, P.
4
Makarov, Yu. N.
4
Schmitt, T.
4
Talalaev, R. A.
4
Yakovlev, E. V.
4
Zorn, M.
4
Nastase, N.
3
Bay, H.
2
Bernat, P. F.
2
Bimberg, D.
2
Reißmann, L.
2
Strittmatter, A.
2
Zettler, T.
2
Bay, H. L.
1
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Research Program
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
29
Grundlagen für zukünftige Informationstechnologien
12
Contributing Institute
Institut für Halbleiterschichten und Bauelemente; ISG-1
Center of Nanoelectronic Systems for Information Technology; CNI
27
Scientific Report
2005
14
2004
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2006
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2002
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2003
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