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1

Characterization of high- LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

Yang, S.
2011

Applied physics letters, 99 (2011) S. 182103

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-11-01. Available in OpenAccess from 2011-11-01

2

Journal Article

Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy

Zhang, B.
2011

Applied physics letters, 98 (2011) S. 252101

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-06-20. Available in OpenAccess from 2011-06-20

3

Conference Presentation

Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source

Zhao, Q.T.
2011

“...2011...”

4

Contribution to a book
Contribution to a conference proceedings

Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs

Nichau, A.
2011

“...2011...”

5

Journal Article

Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors

Durgun Özben, E.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01A903

“...2011...”

6

Contribution to a book

Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices

Lopes, J.M.J.
2011

“...2011...”

7

Contribution to a book
Contribution to a conference proceedings

Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source

Zhao, Q.T.
2011

“...2011...”

8

Journal Article

An Improved Si tunnel Field Effect Transistor with a Buried Strained Si1-xGex Source

Zhao, Q.T.
2011

IEEE Electron Device Letters, 32 (2011) S. 1480 - 1482

“...2011...”

9

Journal Article

Integration of LaLuO3 (k 30) as High-k Dielectric on Strained and Unstrained SOI MOSFETs with Replacement Gate Process

Durgun Özben, E.
2011

IEEE Electron Device Letters, 32 (2011) S. 15 - 17

“...2011...”

10

Journal Article

Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process

Durgun Özben, E.
2011

IEEE Transactions on Electron Devices, 58 (2011) S. 617 - 622

“...2011...”

11

Contribution to a book
Contribution to a conference proceedings

Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

Schmidt, M.
2011

“...2011...”

12

Conference Presentation

20nm gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi2 source/drain

Knoll, L.
2011

“...2011...”

13

Conference Presentation

Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs

Nichau, A.
2011

“...2011...”

14

Conference Presentation

Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

Schmidt, M.
2011

“...2011...”

15

Conference Presentation

NiSi Nano-contacts to Strained and Unstrained Silicon Nanowires

Habicht, S.
2011

“...2011...”

16

Conference Presentation

Planar and Nanowire Si-TFETs

Zhao, Q.T.
2011

“...2011...”

17

Contribution to a book
Contribution to a conference proceedings

20nm gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi2 source/drain

Knoll, L.
2011

“...2011...”

18

Contribution to a book
Contribution to a conference proceedings

Thermal Stability and Interface Improvement of Thin NiSiGe by C+ ion implantation

Zhang, B.
2011

“...2011...”

19

Contribution to a book
Contribution to a conference proceedings

NiSi Nano-contacts to Strained and Unstrained Silicon Nanowires

Habicht, S.
2011

“...2011...”

20

Contribution to a book
Contribution to a conference proceedings

Analysis of n-type Schottky-Barrier MOSFETs

Tinoco, J.C.
2011

“...2011...”

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