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Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
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JARA-FIT; JARA-FIT
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Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
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1
Journal Article
Effect of Cationic Interface Defects on Band Alignment and Contact Resistance in Metal/Oxide Heterojunctions
AndrÀ, Michael
2020
Advanced electronic materials, 6 (2020) 1, S. 1900808 -
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2
Journal Article
Field-enhanced route to generating anti-Frenkel pairs in HfO 2
Schie, Marcel
2018
Physical review materials, 2 (2018) 3, S. 035002
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3
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A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO 3 -Based Memory Cell
Funck, Carsten
2018
Advanced electronic materials, 4 (2018) 7, S. 1800062 -
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Ion migration in crystalline and amorphous HfO$_{X}$
Schie, Marcel
2017
The journal of chemical physics, 146 (2017) 9, S. 094508 -
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Waser, R.
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Menzel, Stephan
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Dittmann, Regina
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Funck, Carsten
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AndrÀ, Michael
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BĂ€umer, Christoph
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DvorËĂĄk, Filip
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Gunkel, Felix
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Marchewka, Astrid
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Martin, Manfred
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MatolĂn, VladimĂr
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Mueller, David N.
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MĂŒller, Michael P.
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MĂŒller, Phillip
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Raab, Nicolas
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Robertson, John
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Rose, MarcâAndrĂ©
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Ć mĂd, BrËetislav
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Research Program
Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)
Controlling Electron Charge-Based Phenomena
3
Controlling Collective States
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Elektronische Materialien; PGI-7
4
JARA - HPC; JARA-HPC
JARA-FIT; JARA-FIT
Elektronische Eigenschaften; PGI-6
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