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JARA-FIT; JARA-FIT
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Halbleiter-Nanoelektronik; PGI-9
Contribution to a conference proceedings
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1
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20nm gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi2 source/drain
Knoll, L.
2011
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2
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Thermal Stability and Interface Improvement of Thin NiSiGe by C+ ion implantation
Zhang, B.
2011
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3
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NiSi Nano-contacts to Strained and Unstrained Silicon Nanowires
Habicht, S.
2011
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4
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Analysis of n-type Schottky-Barrier MOSFETs
Tinoco, J.C.
2011
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5
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Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source
Zhao, Q.T.
2011
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6
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Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs
Nichau, A.
2011
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7
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Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors
Schmidt, M.
2011
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8
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Approaches to affect InAs nanowire structure in SA-MOVPE
Hardtdegen, H.
2011
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9
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Uniform GaAs/InAs - core/shell nanowire arrays grown by selective-area MOVPE
Haas, F.
2011
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10
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Comparison of InAs nanowire conductivity: influence of growth method and structure
Sladek, K.
2011
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11
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SiGe-quantum dot arrays for Single Photon Detection
Moers, J.
2011
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11
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Contribution to a book
11
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Mantl, S.
7
Zhao, Q.T.
7
Buca, Dan Mihai
4
Grützmacher, Detlev
4
Luptak, R.
4
Bourdelle, K.K.
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Hardtdegen, Hilde
3
Knoll, L.
3
Sladek, K.
3
Winden, A.
3
von der Ahe, M.
3
Haas, F.
2
Habicht, S.
2
Hartmann, J.M.
2
Lenk, Steffi
2
Richter, S.
2
Schmidt, M.
2
Trellenkamp, Stefan
2
Weirich, Th.
2
Zhang, B.
2
Besmehn, A.
1
Blömers, C.
1
Castro, G.R.
1
Dvurechenskii, A.V.
1
Dürgün-Özben, Eylem
1
Emam, M.
1
Feste, S.F.
1
Fox, A.
1
Gerharz, J.
1
Grap, T.
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Research Program
Grundlagen für zukünftige Informationstechnologien
11
Contributing Institute
Halbleiter-Nanoelektronik; PGI-9
JARA-FIT; JARA-FIT
Bioelektronik; PGI-8
2
Mikrostrukturforschung; PGI-5
1
Zentralabteilung für Chemische Analysen; ZCH
1
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2011
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