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1
Contribution to a book
Contribution to a conference proceedings
THz probe for nanowire FETs: simulation of few-electron fingerprints
Indlekofer
,
K
.
M
.
2007
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Indlekofer
,
K
.
M
....
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2
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Seamless transition from the single-electron regime to field-effect transistor operation of nanoscale Schottky-barrier FETs
Indlekofer
,
K
.
M
.
2006
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,
K
.
M
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3
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Resonant Tunneling Barrier Systems and Semiconductor Nanodots
Indlekofer
,
K
.
M
.
2003
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.
M
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4
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Perspectives of resonant tunneling diodes
Förster, A.
2002
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.
M
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5
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Intrinsic bistability effect in delta doped tunneling diodes
Vitusevich, S. A.
1999
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Indlekofer
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.
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Indlekofer, K. M.
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Förster, A.
2
Knoch, J.
2
Appenzeller, J.
1
Belyaev, B. A.
1
Konakova, R. V.
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Research Program
Grundlagen für zukünftige Informationstechnologien
2
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
2
Halbleiterschichtsysteme und Mesoskopische Strukturen
1
Contributing Institute
Institut für Halbleiterschichten und Bauelemente; ISG-1
3
Center of Nanoelectronic Systems for Information Technology; CNI
2
Halbleiter-Nanoelektronik; IBN-1
1
Institut für Schicht- und Ionentechnik; ISI
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1999
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