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Journal Article
Silicon-based nanostructures and nanodevices for long term nanoelectronics applications
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Journal Article
Silicon-based nanostructures and nanodevices for long term nanoelectronics applications
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Journal Article
Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacs by C+ Pre-Implantation
Zhang, B.
2011
Electrochemical and solid-state letters, 14 (2011) S. H261-H263
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2011
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2
Journal Article
Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process
Durgun Özben, E.
2011
IEEE Transactions on Electron Devices, 58 (2011) S. 617 - 622
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3
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Integration of LaLuO3 (k 30) as High-k Dielectric on Strained and Unstrained SOI MOSFETs with Replacement Gate Process
Durgun Özben, E.
2011
IEEE Electron Device Letters, 32 (2011) S. 15 - 17
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Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors
Durgun Özben, E.
2011
Journal of vacuum science & technology / B, 29 (2011) S. 01A903
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Journal Article
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Mantl, S.
4
Zhao, Q.T.
4
Besmehn, A.
3
Bourdelle, K.K.
3
Dürgün-Özben, Eylem
3
Lenk, Steffi
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Lopes, J.M.J.
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Nichau, A.
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Schubert, Jürgen
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Lupták, R.
2
Buca, Dan Mihai
1
Hartmann, J.M.
1
Holländer, Bernhard
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Schnee, M.
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Wang, X.
1
Yu, W.
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Zhang, B.
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Zhang, M.
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Research Program
Grundlagen für zukünftige Informationstechnologien
4
Silicon-based nanostructures and nanodevices for long term nanoelectronics applications
Contributing Institute
Halbleiter-Nanoelektronik; PGI-9
4
JARA-FIT; JARA-FIT
4
Zentralabteilung für Chemische Analysen; ZCH
3
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