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Controlling Configuration-Based Phenomena
Halbleiter-Nanoelektronik; PGI-9
2019
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Controlling Configuration-Based Phenomena
Halbleiter-Nanoelektronik; PGI-9
2019
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1
Journal Article
Metal organic vapor phase epitaxy of $$\hbox {Ge}_{1}\hbox {Sb}_{2}\hbox {Te}_{4}$$ Ge 1 Sb 2 Te 4 thin films on Si(111) substrate
Ratajczak, Albert
2019
Applied physics / A Materials science & processing A, 125 (2019) 3, S. 163
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Analysis of defect states in MoSe2 and unfolding of defect band structure
Rost, Stefan
2019
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Journal Article
1
Poster
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Aguilera, Irene
1
Blügel, Stefan
1
Du, Hongchu
1
Friedrich, Christoph
1
Grützmacher, Detlev
1
Kardynal, Beata
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Mussler, Gregor
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Rost, Stefan
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ratajczak, Albert
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von der Ahe, Martina
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Research Program
Controlling Configuration-Based Phenomena
Controlling Spin-Based Phenomena
1
Grundlagen der Ionentransportprozesse in resistiv schaltenden Oxiden (B03)
1
Contributing Institute
Halbleiter-Nanoelektronik; PGI-9
JARA-FIT; JARA-FIT
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JARA - HPC; JARA-HPC
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Materialwissenschaft u. Werkstofftechnik; ER-C-2
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Photovoltaik; IEK-5
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Quanten-Theorie der Materialien; IAS-1
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