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Controlling Configuration-Based Phenomena
Materialwissenschaft u. Werkstofftechnik; ER-C-2
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Halbleiter-Nanoelektronik; PGI-9
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Controlling Configuration-Based Phenomena
Materialwissenschaft u. Werkstofftechnik; ER-C-2
AND
Halbleiter-Nanoelektronik; PGI-9
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1
Journal Article
Metal organic vapor phase epitaxy of $$\hbox {Ge}_{1}\hbox {Sb}_{2}\hbox {Te}_{4}$$ Ge 1 Sb 2 Te 4 thin films on Si(111) substrate
Ratajczak, Albert
2019
Applied physics / A Materials science & processing A, 125 (2019) 3, S. 163
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Conference Presentation
MOVPE of Ge1Sb2Te4: a model material for energy-saving non-volatile memories
Hardtdegen, Hilde
2016
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Conference Presentation
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Journal Article
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Du, Hongchu
2
Grützmacher, Detlev
2
Mussler, Gregor
2
ratajczak, Albert
2
von der Ahe, Martina
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Bornhöfft, Manuel
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Hardtdegen, Hilde
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Jost, Peter
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Keller, Kristof
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Mayer, Joachim
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Mikulics, Martin
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Riess, Sally
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Roth, Georg
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Schuck, Martin
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Schwedt, Alexander
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Research Program
Controlling Configuration-Based Phenomena
Grundlagen der Ionentransportprozesse in resistiv schaltenden Oxiden (B03)
1
Contributing Institute
Halbleiter-Nanoelektronik; PGI-9
Materialwissenschaft u. Werkstofftechnik; ER-C-2
JARA-FIT; JARA-FIT
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Mikrostrukturforschung; PGI-5
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2016
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